PD- 95537
IRFB33N15DPbF
SMPS MOSFET
IRFS33N15DPbF
IRFSL33N15DPbF
HEXFET ? Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
V DSS
150V
R DS(on) max
0.056 ?
I D
33A
Benefits
l
l
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C OSS to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB33N15D
D 2 Pak
IRFS33N15D
TO-262
IRFSL33N15D
Absolute Maximum Ratings
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
33
I D @ T C = 100°C
I DM
P D @T A = 25°C
P D @T C = 25°C
V GS
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ?
24
130
3.8
170
1.1
± 30
4.4
A
W
W/°C
V
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw ?
-55 to + 175
300 (1.6mm from case )
10 lbf?in (1.1N?m)
°C
Typical SMPS Topologies
l
Telecom 48V input Active Clamp Forward Converter
Notes ?
through ?
are on page 11
www.irf.com
1
7/21/04
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